Photovoltaic effect in nanopore based bilayer MoS2 devices
Abstract
In this work, we fabricated and measured a bilayer MoS2 devices based on nanopore structure. The bilayer MoS2 films were synthesized and placed on top of the nanopore. The gold metal is then evaporated and contacted to top and bottom of MoS2 film to form electrodes for electronic measurement. The asymmetric Au/MoS2/Au devices exhibit current-voltage rectification which is attributed to photovoltaic properties. The photo-response of a nanopore based bilayer MoS2 devices is investigated which shows short circuit current as well as open circuit voltage under illumination. It is also found that the photogain of devices is calculated in the range of 105 and switching behavior with light is stable and reproducible. These characteristics make atomic layered MoS2 device to be great potential for application in electronics and optoelectronics.
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References
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[10] K. K. Li, W. Zhan, Y. H. Lee, Y. C. Lin, M. T. Chang, C.Y. Su, C. S. Chang, H. Y. Li, Y. Shi, H. Zhang, C. S. Lai, L. J. Li, “Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates”, Nano Lett. 12, 2012, pp. 1538−1544.
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[13] M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape, P. Barbara, “Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions”, Scientific Reports 3, 2013, pp.1634.
[14] S. Ryu, N. Y. Ha, Y. H. Ahn, J. Y. Park,S. Lee, “Light intensity dependence of organic solar cell operation and dominance switching between Shockley–Read–Hall and bimolecular recombination losses”, Scientific Reports 11, 2021, pp.16781.
[15] S. Ryu, D. C. Nguyen, Na.Y. Ha, H. J. Park, Y. H. Ahn, J. Y. Park, S. Lee, “Light Intensity-dependent Variation in Defect Contributions to Charge Transport and Recombination in a Planar MAPbI3 Perovskite Solar Cell”, Scientific Reports 9, 2019, pp.19846.
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Published
2021-12-31
How to Cite
NGUYEN, Nam Linh.
Photovoltaic effect in nanopore based bilayer MoS2 devices.
Journal of Science and Technology: Issue on Information and Communications Technology, [S.l.], v. 19, n. 12.2, p. 56-59, dec. 2021.
ISSN 1859-1531.
Available at: <http://ict.jst.udn.vn/index.php/jst/article/view/145>. Date accessed: 22 nov. 2024.
doi: https://doi.org/10.31130/ict-ud.2021.145.
Section
Articles
