Effects of Temperature and Stress on the InGaP/GaAs Heterojunction Phototransistor: A Review

Phuc Hong Than; Tran Thi Tra Vinh; Le Thi My Hanh; Than Quang Tho; Nguyen Vu Anh Quang; Tran The Son

doi:10.31130/ict-ud.2021.112

Phuc Hong Than Faculty of Electrical-Electronic Engineering, Duy Tan University
Tran Thi Tra Vinh The University of Danang – Vietnam Korea University of Information and Communication Technology (VKU), Danang, Vietnam
Le Thi My Hanh The University of Danang – Vietnam Korea University of Information and Communication Technology (VKU), Danang, Vietnam
Than Quang Tho Central Power Corporation (EVNCPC), Danang, Vietnam
Nguyen Vu Anh Quang The University of Danang – Vietnam Korea University of Information and Communication Technology (VKU), Danang, Vietnam
Tran The Son The University of Danang – Vietnam Korea University of Information and Communication Technology (VKU), Danang, Vietnam

DOI: https://doi.org/10.31130/ict-ud.2021.112

Abstract

Although the effects of electrical stress and temperature on the performance of the InGaP/GaAs heterojunction bipolar transistors (HBTs) have been widely studied and reported, little or none was reported for the InGaP/GaAs heterojunction phototransistors (HPTs) in the literature. In this paper, we discuss the temperature-dependent characteristic of InGaP/GaAs HPTs before and after electrical stress and assess the effectiveness of the emitter-ledge passivation, which was found to effectively keep the InGaP/GaAs HBTs from degrading at higher temperature or after an electrical stress. The emitter-ledge passivation is also effective keeping a higher optical gain even at higher temperature. An electrical stress was given to the HPTs by keeping the collector current at 60 mA for 15 min. Since the collector current density as an electrical stress is 24 A/cm² and much smaller than the stress usually given to smaller HBTs for the stress test, the decreased optical gain was not observed when it was given at room temperature. However, when it was given at 420 K, significant decreases of the current gain and optical gain were observed at any temperature. Nevertheless, the emitter-ledge passivation was found effective in minimizing the decreases of the current gain and optical gain.

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